| PART |
Description |
Maker |
| MTM8N35 MTM8N40 MTH8N40 MTH8N35 |
(MTH8N35 / MTH8N40) Power Field Effect Transistor
Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS
|
Motorola Semiconductor
MOTOROLA[Motorola, Inc]
|
| PSMN005-75P PSMN005-75B PSMN005_75P_75B-01 |
N-channel logic level field-effect power transistor in a plastic package using TrenchMOS technology. 75 A, 75 V, 0.005 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
From old datasheet system
N-channel enhancement mode field-effect transistor
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| SSM3K01T |
3200 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE
Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications
|
Toshiba Semiconductor
|
| SSM3K02F |
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 东芝场效应晶体管频道马鞍山类
Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications
|
Toshiba Corporation
Toshiba, Corp.
Toshiba Semiconductor
|
| 2SJ619 |
ZD-3.6V- 1 W
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2MOSV)
Field Effect Transistor Silicon P Channel MOS Type (L2-PI-MOSV) Switching Regulator and DC-DC Converter Applications Motor Drive Applications
|
Toshiba Corporation
Toshiba Semiconductor
Sanyo Semicon Device
|
| 2SK3387 |
Field Effect Transistor Silicon N Channel MOS Type (L2-pi-MOSV) Switching Regulator, DC-DC Converter and Motor Drive Applications
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L2-pi-MOSV) 东芝场效应晶体管频道马鞍山型（二π- MOSV
From old datasheet system
|
PMC-Sierra, Inc.
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| NDH8320C |
Dual N & P-Channel Enhancement Mode Field Effect Transistor(双N沟道和P沟道增强型场效应N沟道：漏电流3A, 漏源电压20V，导通电.06Ω；P沟道：漏电流-2A, 漏源电压-20V，导通电.13Ω 3000 mA, 20 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET
Dual N & P-Channel Enhancement Mode Field Effect Transistor
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| PTF10149 |
70 Watts, 92160 MHz GOLDMOS Field Effect Transistor
70 Watts, 921-960 MHz GOLDMOS Field Effect Transistor
|
Ericsson Microelectronics
ERICSSON[Ericsson]
|
| TPC8104-H |
Field Effect Transistor Silicon P Channel MOS Type (High Speed U-MOSII) High Speed and High Efficiency DC .DC Converters Lithium Ion Battery Applications Notebook PCs Portable Equipment Applications
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (High Speed U−MOSII)
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (High Speed U-MOSII)
|
Toshiba Corporation
Toshiba Semiconductor
|
| 2SK3442 |
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII)
From old datasheet system
Field Effect Transistor Silicon N Channel MOS Type (U-MOSII) Switching Regulator Applications, DC-DC Converter and Motor Drive Applications
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| SSM3J14T |
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSII)
Field Effect Transistor Silicon P Channel MOS Type (U-MOSII) Power Management Switch DC-DC Converters
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
